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SIMS analysis equipment Product List and Ranking from 4 Manufacturers, Suppliers and Companies | IPROS GMS

SIMS analysis equipment Product List

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[Analysis Case] Evaluation of Discoloration Causes in Ceramics

[Analysis Case] Evaluation of Discoloration Causes in Ceramics

TOF-SIMS enables imaging of the discoloration causes of inorganic materials.

Ceramics are inorganic compound materials widely used in everyday goods and electronic components. For evaluating the discoloration of ceramics caused by impurities and adherents, TOF-SIMS analysis, which allows for imaging analysis of trace components regardless of organic or inorganic substances at the focus area, is effective. This document presents a case study where the discoloration of aluminum oxide ceramics was analyzed using TOF-SIMS, demonstrating the cause of discoloration through ion images and line profiles. Measurement method: TOF-SIMS Product field: Manufacturing equipment and components Analysis purpose: Composition distribution evaluation For more details, please download the document or contact us.

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  • Contract Analysis
  • SIMS analysis equipment

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[Example of TOF-SIMS] Analysis of Li

[Example of TOF-SIMS] Analysis of Li

It is possible to detect with high sensitivity! We will introduce a case comparing the analysis of Li using TOF-SIMS and SEM-EDX.

We will introduce a case comparing the analysis of lithium (Li) using TOF-SIMS and SEM-EDX. While SEM-EDX is used for the analysis of contamination and foreign substances, it is difficult to detect Li with general EDX, excluding windowless EDX. On the other hand, TOF-SIMS can detect Li with high sensitivity. Please feel free to contact us if you need assistance. 【Overview】 ■ Analysis of stains on copper plates ■ SEM-EDX analysis → Difficult to detect Li ■ TOF-SIMS analysis → Li detectable *For more details, please refer to the PDF document or feel free to contact us.

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  • Contract measurement
  • SIMS analysis equipment

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[Analysis Case] Evaluation of Metal Distribution within Hair

[Analysis Case] Evaluation of Metal Distribution within Hair

Evaluation of component distribution in hair cross-sections using TOF-SIMS analysis.

Measuring hair and obtaining the distribution of components within it is effective when investigating the effects of hair care and dyeing. We will introduce a case where gray and black hair were collected from the same individual and the internal component distribution was evaluated. A cross-section of the hair was created, and TOF-SIMS measurements were conducted. TOF-SIMS can provide distribution information on inorganic substances such as metals and organic molecules. This time, we focused on measuring the distribution of metals in the hair cross-section.

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[Analysis Case] Evaluation of Nickel Plating Peel-off Surface by TOF-SIMS

[Analysis Case] Evaluation of Nickel Plating Peel-off Surface by TOF-SIMS

Investigation of the causes of coating peeling and poor adhesion through TOF-SIMS analysis.

To investigate the delamination issue that occurred on the nickel plating over bronze, TOF-SIMS analysis was conducted. By forcibly delaminating the affected area and performing qualitative analysis with TOF-SIMS, siloxanes and potassium compounds (such as potassium chloride and potassium sulfate) were detected from the delamination surface. These components are believed to be the cause of the delamination.

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Technical Information Magazine 201903-01 Cutting-edge SIMS Analysis Equipment

Technical Information Magazine 201903-01 Cutting-edge SIMS Analysis Equipment

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** The state-of-the-art secondary ion mass spectrometry (SIMS) device, NanoSIMS 50L, enables imaging measurements with spatial resolution approximately two orders of magnitude higher than conventional SIMS, thanks to its ion beam with a probe diameter of about 50 nm and a highly efficient mass analysis system. This paper introduces the features of the NanoSIMS 50L device and analysis examples. **Table of Contents** 1. Introduction 2. Overview of the Analytical Device 3. Analysis Example of Hair Cross-Section 4. Analysis Example of SiC Semiconductor Devices 5. Conclusion

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Evaluation of impurity diffusion from the high concentration layer to the lower layer membrane.

Evaluation of impurity diffusion from the high concentration layer to the lower layer membrane.

Introducing backside SIMS analysis conducted from the substrate side!

In SIMS analysis, when evaluating the diffusion of impurities from a high-concentration layer to a lower layer film, the effects of surface roughness and sputter etching may influence the crater edge effect and knock-on effects from the high-concentration layer. A method of evaluation that is not affected by these influences is Backside SIMS, which conducts SIMS analysis from the substrate side. In the attached PDF document, we introduce the evaluation of the diffusion distribution of F from a SiO2 film (FSG film) to a lower SiO2 film using Backside SIMS, so please take a look. 【Principle of Backside SIMS】 - By polishing the backside of the Si substrate to thin it, we can approach from the backside. - It is possible to control the remaining thickness of the Si substrate to create a thin film, to thin specific areas of patterned samples, or to selectively stop the etching of Si layers such as SiO2. In cases where there are layers that can stop etching, it is also possible to completely remove the Si substrate portion by wet etching. *For more details, please download the PDF or feel free to contact us.

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