SIMS analysis equipment Product List and Ranking from 4 Manufacturers, Suppliers and Companies

[Analysis Case] Evaluation of Degradation of Lithium-Ion Secondary Battery Anodes

Consistent evaluation from battery cell manufacturing, degradation testing, disassembly, to investigation of state changes due to degradation.

A degradation test was conducted on a battery cell made with LiCoO2 as the positive electrode, graphite as the negative electrode, and LiPF6/EC:DEC as the electrolyte, which was left in a constant temperature chamber at 60°C in a charged state of 4.2V for about one week. After that, the cell was disassembled and cleaned in an Ar atmosphere, and TOF-SIMS analysis of the negative electrode graphite was performed. Before the test, fragments derived from the binder and electrolyte salt were confirmed, and after the test, fragments such as Li3PO4 and PF3O, which are believed to have been generated due to the degradation of the electrolyte salt, as well as fragments from Li2CO3, were observed. Additionally, the detection of Co suggests the possibility of leaching of the positive electrode active material.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
Contract measurement
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of Impurity Concentration in AlGaN UV Sensors Using SIMS

A lineup of AlGaN standard samples with various Al compositions.

In SIMS analysis, it is essential to use standard samples with a composition close to that of the measurement sample in order to obtain more reliable concentration quantification values. By offering a wide range of AlGaN standard samples with varying Al content, we have been able to more accurately determine the impurity concentration in AlGaN, which is used in UV LEDs and UV sensors. We will present a case study where SIMS analysis of a UV sensor was conducted to quantify the concentration of the dopant, Si.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of the Degradation Layer of Polycarbonate

It is possible to evaluate the film thickness of the degraded layer using the GCIB (Ar cluster).

Polycarbonate (PC) is a type of thermoplastic that has excellent transparency, impact resistance, and heat resistance, and is widely used as a material for solar panels, eyeglass lenses, CDs, automotive parts, and medical devices. In this study, TOF-SIMS analysis was conducted using GCIB (Ar cluster) with a sputter ion beam to evaluate the degradation layer on the surface of PC. *Note: GCIB stands for Gas Cluster Ion Beam.*

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of Copper (Cu) Oxide Film Thickness: Differences Due to Storage Environment

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

Copper (Cu), used as wiring material, forms an oxide film in the air. Here, we present a case study evaluating the differences in film thickness due to variations in storage environments. Copper (Cu) wrapped in aluminum foil and copper (Cu) stored in a plastic bag were each kept for 40 days, and the oxide film thickness was measured using TOF-SIMS. Additionally, a continuous investigation over approximately 20 days confirmed reproducibility. TOF-SIMS allows for depth profiling analysis of inorganic materials such as oxides and metals. Measurement method: TOF-SIMS Product fields: Displays, LSI, Memory, Electronic components Analysis purpose: Evaluation of chemical bonding states For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of Residual Contaminants in Blood Components

Visualization of wipe residues using TOF-SIMS

When describing cleaning methods in brochures for medical devices, it is necessary to confirm the validity of those cleaning methods. In this case, as a verification experiment for the wiping method of medical devices, we applied bovine serum albumin (BSA), a blood model drug, to sheets of acetyl cellulose (TAC), SUS-made scalpels, and glass, and evaluated the residual components before and after wiping using TOF-SIMS. As a result, it was found that ethanol is more suitable than water for wiping BSA, and that the wiping effectiveness varies depending on the substrate. Measurement method: TOF-SIMS Product field: Medical devices and pharmaceuticals Analysis purpose: Composition evaluation, identification, composition distribution evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of Discoloration Causes in Ceramics

TOF-SIMS enables imaging of the discoloration causes of inorganic materials.

Ceramics are inorganic compound materials widely used in everyday goods and electronic components. For evaluating the discoloration of ceramics caused by impurities and adherents, TOF-SIMS analysis, which allows for imaging analysis of trace components regardless of organic or inorganic substances at the focus area, is effective. This document presents a case study where the discoloration of aluminum oxide ceramics was analyzed using TOF-SIMS, demonstrating the cause of discoloration through ion images and line profiles. Measurement method: TOF-SIMS Product field: Manufacturing equipment and components Analysis purpose: Composition distribution evaluation For more details, please download the document or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of the Distribution of Cleaning Components on Ceramic Surfaces

It is possible to visualize the distribution of cleaning components and evaluate the distribution in the depth direction.

Ceramics are inorganic compound materials widely used in everyday items and electronic components. Their surface condition significantly affects the properties and performance of materials such as everyday items and electronic components. Therefore, it is important to properly evaluate the surface condition when assessing the functionality of ceramics. This document introduces a case study evaluating the cleaning components that contribute to the wettability of ceramic surfaces made of zirconium oxide, using TOF-SIMS to assess surface distribution and depth distribution. Measurement method: TOF-SIMS Product field: Manufacturing equipment and components Analysis purpose: Qualitative and distribution evaluation For more details, please download the document or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
Contract measurement
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Example of TOF-SIMS] Analysis of Li

It is possible to detect with high sensitivity! We will introduce a case comparing the analysis of Li using TOF-SIMS and SEM-EDX.

We will introduce a case comparing the analysis of lithium (Li) using TOF-SIMS and SEM-EDX. While SEM-EDX is used for the analysis of contamination and foreign substances, it is difficult to detect Li with general EDX, excluding windowless EDX. On the other hand, TOF-SIMS can detect Li with high sensitivity. Please feel free to contact us if you need assistance. 【Overview】 ■ Analysis of stains on copper plates ■ SEM-EDX analysis → Difficult to detect Li ■ TOF-SIMS analysis → Li detectable *For more details, please refer to the PDF document or feel free to contact us.

Company：アイテス
Price：Other

Contract measurement
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface using SIMS

High-precision B profile analysis through sample cooling.

The concentration distribution of boron (B) in silicon (Si), which significantly affects the characteristics of device design, can be evaluated with high sensitivity and high depth resolution through SIMS analysis. However, it has been found that under general analysis conditions, distortions occur in the concentration distribution of B due to measurement-related factors. In MST, it has been confirmed that sample cooling is effective for correcting these distortions, enabling a more accurate evaluation of the concentration distribution.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

[Analysis Case] Evaluation of Nickel Plating Peel-off Surface by TOF-SIMS

Investigation of the causes of coating peeling and poor adhesion through TOF-SIMS analysis.

To investigate the delamination issue that occurred on the nickel plating over bronze, TOF-SIMS analysis was conducted. By forcibly delaminating the affected area and performing qualitative analysis with TOF-SIMS, siloxanes and potassium compounds (such as potassium chloride and potassium sulfate) were detected from the delamination surface. These components are believed to be the cause of the delamination.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

Technical Information Magazine 201903-01 Cutting-edge SIMS Analysis Equipment

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** The state-of-the-art secondary ion mass spectrometry (SIMS) device, NanoSIMS 50L, enables imaging measurements with spatial resolution approximately two orders of magnitude higher than conventional SIMS, thanks to its ion beam with a probe diameter of about 50 nm and a highly efficient mass analysis system. This paper introduces the features of the NanoSIMS 50L device and analysis examples. **Table of Contents** 1. Introduction 2. Overview of the Analytical Device 3. Analysis Example of Hair Cross-Section 4. Analysis Example of SiC Semiconductor Devices 5. Conclusion

Company：東レリサーチセンター
Price：Less than 10,000 yen

Contract Analysis
Contract measurement
Technical and Reference Books
SIMS analysis equipment

View product details

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

Evaluation of impurity diffusion from the high concentration layer to the lower layer membrane.

Introducing backside SIMS analysis conducted from the substrate side!

In SIMS analysis, when evaluating the diffusion of impurities from a high-concentration layer to a lower layer film, the effects of surface roughness and sputter etching may influence the crater edge effect and knock-on effects from the high-concentration layer. A method of evaluation that is not affected by these influences is Backside SIMS, which conducts SIMS analysis from the substrate side. In the attached PDF document, we introduce the evaluation of the diffusion distribution of F from a SiO2 film (FSG film) to a lower SiO2 film using Backside SIMS, so please take a look. 【Principle of Backside SIMS】 - By polishing the backside of the Si substrate to thin it, we can approach from the backside. - It is possible to control the remaining thickness of the Si substrate to create a thin film, to thin specific areas of patterned samples, or to selectively stop the etching of Si layers such as SiO2. In cases where there are layers that can stop etching, it is also possible to completely remove the Si substrate portion by wet etching. *For more details, please download the PDF or feel free to contact us.

Company：東芝ナノアナリシス
Price：Other

Other analysis and evaluation services
SIMS analysis equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

SIMS analysis equipment Product List and Ranking from 4 Manufacturers, Suppliers and Companies | IPROS GMS